Aller au menu Aller au contenu
MASTER NANOTECH
Parcours international Nanotech
MASTER NANOTECH
MASTER NANOTECH

> Formation

Nanoélectronique

A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail cet article Facebook Twitter Linked In
  • Volumes horaires

    • CM : 28h
    Crédits ECTS : 2
  • Responsables : Adrian IONESCU (EPFL)

Objectifs

  • Comprehension of ultimate limitations of microelectronic devices: physical and technological
  • Understanding of the deep sub-micron (<70nm) innovative CMOS architectures and their limitations
  • Be able to qualitatively and quantitatively describe the functionality of few-electron devices (single electron transistor and memory, QCA, etc.)
  • Understand the functionality of discrete charge logic cells (SET and QCA)
  • Learn the new technological evolutions in nanoelectronics and their motivations

Contenu

Courses

  1. Ultimate CMOS technologies and their showstoppers
  2. Phenomena specific to deep submicron devices: non-stationary phenomena (velocity overshoot), ballistic transport, quantum effects, atomic scale parameter fluctuation (fluctuation of number of dopants, interface roughness).
  3. Innovative device architectures (Double-gate MOS transistor -DGMOS, dynamic threshold MOS transistor - DTMOS, gate-all-around transistor - GAA, vertical MOS transistors)
  4. Nano-scale and quantum devices: Single Electron Transistor (SET), quantum wires, few-electron memories, etc.
  5. Hybrid SET-FET circuits
  6. Charge-based circuit architectures: quantum dot cellular automata (QCA)
  7. Carbon Nanotubes: technology, devices and circuits
  8. Spintronics

Exercises and Laboratories

None

Informations complémentaires

Related courses
Necessary conditions : none
Preparation for : none

A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail cet article Facebook Twitter Linked In

mise à jour le 23 janvier 2019

Université Grenoble Alpes