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MASTER NANOTECH
Parcours international Nanotech
MASTER NANOTECH
MASTER NANOTECH

> Formation

Nanostructures : physique et transports

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  • Volumes horaires

    • CM : 22h
    • TD : 6h
    Crédits ECTS : 2,5
  • Responsables :

Objectifs

To introduce the main features required to understand electronic transport in nanostructures.

Contenu

Courses

First we give a brief review of the electronic properties which control the behaviour of a bulk semiconductor. We put forward the modifications brought to a number of quantities by a reduction in device dimension: energy levels, density of states, effective mass approximation, radiative lifetime, etc.

Then we focus on the specific properties which affect electronic transport in nanostructures:

  • Ballistic transport and phase coherence.
  • Point contact resistance; waveguide analogy.
  • Landauer-Büttiker formalism.
  • Coulomb blockade effect.
  • Weak localisation.

Each of these aspects will be illustrated through practical examples and exercises.


Exercises and Laboratories

None

Informations complémentaires

Teaching type
lecture

Related courses
Necessary conditions : Semiconductors Physics
Preparation for : Nanoelectronics

Bibliographie

  • C.W.J.Beenaker and H.van Houten, Quantum transport in semiconductor nanostructures, Solid State Physics 44 (Academic Press 1991)
  • J.H.Davies, The physics of low-dimensional semiconductors (Cambridge University Press 1998)
  • S.Datta, Electronic transport in mesoscopic systems (Cambridge University press 1995)
  • D.K.Ferry and S.M.Goodnick, Transport in nanostructures (Cambridge university press 1997)
  • C.Cohen-Tannoudji, B.Diu and F.Laloë, Quantum mechanics, Wiley and Hermann, Paris (1977)
  • N.W.Ashcroft and N.D.Mermin, Solid State Physics (Wiley, New York 1976)
  • B.K.Ridley, Quantum processes in semiconductors (Clarendon Press, Oxford 1982)

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mise à jour le 23 janvier 2019

Grenoble INP Institut d'ingénierie Univ. Grenoble Alpes