Nanoélectronique
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Objectifs
- Comprehension of ultimate limitations of microelectronic devices: physical and technological
- Understanding of the deep sub-micron (<70nm) innovative CMOS architectures and their limitations
- Be able to qualitatively and quantitatively describe the functionality of few-electron devices (single electron transistor and memory, QCA, etc.)
- Understand the functionality of discrete charge logic cells (SET and QCA)
- Learn the new technological evolutions in nanoelectronics and their motivations
Contenu Courses
- Ultimate CMOS technologies and their showstoppers
- Phenomena specific to deep submicron devices: non-stationary phenomena (velocity overshoot), ballistic transport, quantum effects, atomic scale parameter fluctuation (fluctuation of number of dopants, interface roughness).
- Innovative device architectures (Double-gate MOS transistor -DGMOS, dynamic threshold MOS transistor - DTMOS, gate-all-around transistor - GAA, vertical MOS transistors)
- Nano-scale and quantum devices: Single Electron Transistor (SET), quantum wires, few-electron memories, etc.
- Hybrid SET-FET circuits
- Charge-based circuit architectures: quantum dot cellular automata (QCA)
- Carbon Nanotubes: technology, devices and circuits
- Spintronics
Exercises and Laboratories None
Informations complémentaires Related courses
Necessary conditions : none
Preparation for : none
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mise à jour le 23 janvier 2019
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