Characterization - Nanotech Labs

Lab C1: Electrical characterization of MOS capacitors and diode Electrical characterization of MOS capacitors and diode

Using C-V measurement on MOS capacitor, the following extraction will be done             * doping of the substrate             * flat band voltage             * trapped charge density Using the I-V measurement on pn diodes, the following extraction will be done             * Threshold of the diode             * Ideality

Lab C2: Electrical characterization of NMOS transistors

Using the I-V measurement on nMOS , the following extraction will be done             * Threshold of the transistor             * Low field mobility             * Effective length

Lab C3: Electrical characterization of submicron transistors

Lab C4: Characterization of MEMS

DOWNLOADS

• download the ANSYS code for the cantilever
• donwload the viewer (ZIP, 1.8Mo)