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Grenoble INP - UGA
MASTER NANOTECH
Master's Degree in Micro and Nano Technologies for Integrated Systems
MASTER NANOTECH
MASTER NANOTECH

> Courses

From micro to nanoelectronics

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  • Number of hours

    • Lectures : 16
    ECTS : 1,5
  • Officials : Quentin Rafhay 

Goals

This course will be focused on the physics of short channel MOSFET transistor. The aim of these lectures is to give an overview of the challenges raised by scaling in the nanometer range.

Content

Courses

  • Basics of long channel MOS Transistor
  • Short channel MOSFET : mobility degradation due to surface roughness

Threshold voltage roll off
Saturation velocity
Quantum effects : confinement and tunneling
Ballistic limit
MOSFET scaling constant field and constant voltage scaling
Introduction to Roadmap 2002


Exercises and Laboratories

None

Additional Information

Related courses

Necessary conditions : Physique des semiconducteurs - Capacité MOS - Transistor MOS à canal long
Preparation for : Nano-electronics

Bibliography

Fundamentals of Modern VLSI devices, by Y. Taur, T. H. Ning, Cambridge university press 1999

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Date of update September 10, 2019

French
Master Nanotech
Grenoble INP
Minatec - 3 Parvis Louis Néel - CS 50257 - 38016 Grenoble Cedex 1
Tél : +33 (0)4 56 52 91 00
 
 
  République Française
Université Grenoble Alpes